Corporate Overview

TUV CertificateFounded in 1998, GCT Semiconductor is a leading fabless semiconductor company that designs, develops and markets innovative integrated circuit solutions for the wireless communications industry.

With its proven CMOS radio frequency (RF) and SOC expertise, GCT provides state-of-the-art CMOS RF transceivers and CMOS single-chip Mobile TV receivers and other SOC solutions serving 3G and 4G mobile handset manufacturers.

GCT's highly integrated products with minimized footprint reduce overall system BOM cost, size and power consumption.


First Round: $1.4 million in October 1999
Series B: $14 million in April 2000 led by founding venture investor, Parakletos Ventures.
Series C: $38 million in November 2002 led by Pequot Ventures, and other participants included National Semiconductor Corporation, Pericom Semiconductor Corporation, UOB Venture Management, 3V SourceOne Ventures, Mizuho Capital and ITX International Equity.
Series D: $20 million in November 2004 led by Samsung Venture Investment Corporation (SVIC), and including strategic investment from UTStarcom, Inc..Other investors include East Gate Capital, Bokwang Investment Partnership, AT Ventures, KGI Partners, and Nexus Investment Corp. Two of the Company's primary financial investors, Parakletos Ventures and Pequot Capital, also participated in the financing.
Series E: $5 million strategic funding received in August 2006. Led by DoCoMo Capital and JAIC America.
Series F: Completed in April 2009. Led by Parakletos Ventures.

Headquarters and Employees

GCT Semiconductor employs nearly 200 people, including more than 120 engineers. The company is headquartered in San Jose, California with a R&D center in Seoul, South Korea. All of GCT's engineers hold advanced degrees in engineering

2121 Ringwood Avenue
San Jose California 95131

Company Background

In 1998, Dr. K.H. Lee planted the first seed of GCT Semiconductor (GCT) with the development of a new version of the direct conversion architecture for RF transmission and reception functionality. The goal was to create an architecture that could be tailored to suit the demands of a variety of wireless applications while still taking advantage of the manufacturing yields, high level of integration and cost benefits of CMOS manufacturing processes.

Dr. Lee developed GCT's Direct Conversion CMOS RF technology, and founded GCT Semiconductor.

Technology - Direct Conversion Architecture

GCT uses its patented direct conversion architecture to continue to develop wireless communications ICs that offer a variety of benefits for wireless devices. GCT's direct conversion architecture can be formatted to support multimode applications, which will enable devices to communicate via two or more of the many evolving communication standards in the marketplace.

GCT's version of the direct conversion architecture successfully combines the high performance of a super-heterodyne structure into a smaller die size with the associated cost and integration advantages of fabrication using standard CMOS processes. This proprietary technology can be applied to support the demands of many wireless communication standards, including GSM/GPRS, PHS (PAS), WCDMA, Bluetooth®, and IEEE 802.11b/g.

GCT successfully co-developed its RF CMOS process with its foundry partner, UMC, and adopted it into GCT's RF IC products. RF CMOS is a version of normal mixed-mode CMOS that includes on-chip inductors and varactors. It uniquely satisfies market demands for low cost, low power, highly integrated semiconductor products that support wireless applications.